LAM GAS DISTRIBUTION DIFFUSION ELEMENT
LAM GAS DISTRIBUTION DIFFUSION ELEMENT
Advantages
● Exceptionally high resistance to dry fluorine and fluorine-containing plasma etching
● Outstanding high-temperature resistance
● Resistant to plasma ion bombardment, ensuring a long service life
● Low metal leaching, no wafer particle contamination
● A mature, industry-standard material
Nickel reacts with fluorine to form a passivation film of nickel fluoride (NiF₂):
● The film is dense and strongly adherent to the substrate, with a melting point of 1360°C; it resists volatilization, cracking and peeling at high temperatures.
● High temperature resistance threshold: Remains stable up to 650°C in dry fluorine, making it the standard material for industrial fluorine storage tanks and semiconductor etching chambers.
● Slight solubility of the film prevents easy spalling under ion bombardment in plasma, resulting in an extremely low corrosion rate during long-term continuous production.
● Industry consensus: Pure nickel or Monel alloy is almost universally adopted for vessels and pipelines used to store and process high-purity fluorine.
Aluminum reacts with fluorine to form a passivation film of aluminum fluoride (AlF₃):
● Usable only for short-term exposure to dry fluorine at room temperature; its protective performance deteriorates rapidly with rising temperature, with a maximum service temperature of approximately 200°C.
● A large mismatch in thermal expansion coefficient between the film and aluminum substrate causes severe flaking, pulverization and peeling under thermal cycling and plasma impact.
● Once the passivation film ruptures, fluorine will rapidly and continuously corrode the base metal, with violent reactions occurring at high temperatures.
● Corrosion rate ranking for molten fluoride salts and high-temperature fluorine-containing atmospheres: Al ≫ Ni; aluminum corrodes far faster than nickel.
Detailed Classification by Working Conditions (LAM Etcher Diffuser Plate Scenarios)
● Nickel: Long-term stable performance, low metal elution, strong resistance to halogen plasma corrosion.
● Aluminum: Barely viable only for short-term low-temperature operation; continuous high-temperature processes generate persistent aluminum fluoride particles that induce wafer particle defects and deliver an extremely short service life.
For flow equalization/diffusion components in etchers: Nickel/nickel-based alloys are mandatory; solid aluminum foam is strictly prohibited.Aluminum may be used temporarily for short-term trials, yet it is unsuitable for mass-production continuous equipment. Nickel remains the recommended material for long-term engineering applications.
Intuitive Temperature Resistance Comparison (Dry F₂)
① Pure Nickel: Long-term stable at ≤650°C
② Aluminum Alloy: Short-term tolerance at ≤200°C; corrosion accelerates drastically above 200°C
LAM etcher diffuser plates and plasma chamber flow equalization components: Nickel/nickel-chromium alloy foam. It withstands fluorine-containing plasma, features low outgassing, and avoids particle contamination of wafers.
Supplementary Clarification of Common Misconceptions
① Aluminum is not entirely incompatible with fluorine; its performance is vastly inferior to nickel under high-temperature, plasma, or moisture-containing working conditions.
② While aluminum fluoride (AlF₃) itself is chemically stable, its poor bonding strength with the aluminum substrate leads to easy peeling during thermal cycling, eliminating its suitability for long-term protection. Nickel fluoride films feature robust substrate adhesion, delivering far superior engineering reliability compared to aluminum.
If you would like to order custom metal foam or porous metal, please call Huayan Intelligent Technology at +8613661985902,Email: 13661985902@163.com
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